Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1996-06-27
1998-10-20
Chapman, Mark
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
257254, 257415, 7351401, H01L 2982
Patent
active
058246088
ABSTRACT:
A polysilicon thin film is formed on a silicon substrate by LPCVD technique. At this time, by a performing film formation at a low temperature of approximately 620.degree. C., for example, an irregularities portion is formed on the surface thereof. A silicon oxide film that serves as a sacrificial layer is formed thereon and, on this sacrificial layer, a polysilicon thin film that serves as a movable portion forming thin film is formed. Then, the silicon oxide film beneath this polysilicon thin film is removed by wet etching to thereby form a movable portion. As a result, the movable portion of a beam structure that is composed of the thin film is disposed over the silicon substrate at a prescribed distance therefrom. Although an etchant-replacing liquid enters between the movable portion and the substrate whereby the movable portion is attracted toward the substrate, the movable portion is prevented from adhering to the substrate by means of the irregularities portion.
REFERENCES:
patent: 5123282 (1992-06-01), Ikeda et al.
patent: 5326726 (1994-07-01), Tsang et al.
patent: 5447068 (1995-09-01), Tang
patent: 5500549 (1996-03-01), Takeuchi et al.
patent: 5627397 (1997-05-01), Kano et al.
Fujita Makiko
Gotoh Yoshitaka
Takeuchi Yukihiro
Chapman Mark
Nippondenso Co. Ltd.
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