Semiconductor photolithography with superficial plasma etch

Details Semiconductor photolithography with superficial plasma etch Semiconductor photolithography with superficial plasma etch

1992-05-06

1994-05-10

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430322, 430323, 430327, 430313, G03F 700

Patent

active

053106210

ABSTRACT:
A photolithographic process involves the use of plasma to effect a superficial etch of a semiconductor wafer prior to the application of photoresist. Photoresist is applied directly on the wafer, without using an adhesion promotor. The photoresist is then exposed to patterned light. After exposure, the photoresist is developed leaving the desired photoresist mask on the wafer. Due to the superficial etch, curling of the photoresist is minimized, enhancing the selective protection provided by the photoresist to the wafer below.

REFERENCES:
patent: 4176003 (1979-11-01), Brower et al.
Sayka et al. "The Effect of Plasma Treatment on the Wetability of Substrate Materials" Solid State Technology, May 1989, pp. 69-70.
"KTI HMDS" Brochure, KTI Chemicals Inc., HMOS-88-2500, 1988.

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