Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-01-25
2011-01-25
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S466000, C257S186000, C257SE31063
Reexamination Certificate
active
07875946
ABSTRACT:
In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
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Japanese Office Action dated Oct. 20, 2009 along with English Translation.
Kuwatsuka Haruhiko
Uchida Toru
Yasuoka Nami
Yoneda Yoshihiro
Bernstein Allison P
Eudyna Devices Inc.
Fujitsu Limited
Kratz Quintos & Hanson, LLP
Phung Anh
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