Semiconductor photodetector element

Details Semiconductor photodetector element Semiconductor photodetector element

1985-03-26

1987-06-02

Davie, James W.

357 2, 357 40, H01L 2714

Patent

active

046707654

ABSTRACT:
A semiconductor photodetector element has a three-dimensional multi-layer structure including a photoconductive layer for photoelectric conversion, a layer for binary conversion and amplification and a layer including a redundancy circuit so that the need for external reset and clock inputs can be obviated and correct image information can be expected even if there are defective cells among the photodetection conversion cells.

REFERENCES:
patent: 4589003 (1986-05-01), Yamada et al.

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