Semiconductor photodetector devices with pairs of monoatomic lay

Details Semiconductor photodetector devices with pairs of monoatomic lay Semiconductor photodetector devices with pairs of monoatomic lay

1993-02-08

1994-07-12

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 9, 257 12, 257 20, 257192, 257280, 257464, 257592, 257593, 257604, 257656, H01L 3100, H01L 31075

Patent

active

053291506

ABSTRACT:
A semiconductor light wave detector which has a first layer of a highly doped n-type semiconducting substrate, a second layer of a highly doped n-type semiconducting material, a third layer of a distinct intrinsic semiconducting material and a fourth layer of a highly doped n-type semiconducting material similar to the second layer. First and second electrical connections are provided to the fourth layer and to at least one of the first and second layers. A plurality of pairs of Dirac-delta doped monoatomic layers are in the third layer, with the first monoatomic layer of each pair being a layer of donors and with the second monoatomic layer of each pair being acceptors spaced from the donor layer and positioned on the side thereof facing the fourth layer.

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