Semiconductor photodetection device

Details Semiconductor photodetection device Semiconductor photodetection device

2006-08-15

2006-08-15

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257SE31124, C257S459000, C438S091000

Reexamination Certificate

active

07091527

ABSTRACT:
A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.

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Japanese Office Action mailed Feb. 28, 2006 issued with respect to the basic Japanese patent application No. 2001-302109.

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