Semiconductor phase change memory using multiple phase...

Details Semiconductor phase change memory using multiple phase... Semiconductor phase change memory using multiple phase...

2007-10-09

2010-06-01

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S046000, C977S754000

Reexamination Certificate

active

07729162

ABSTRACT:
In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. For example, in one embodiment, a diffusion barrier layer may be maintained between the two distinct phase change layers. In another embodiment, a face centered cubic chalcogenide structure may be utilized.

REFERENCES:
patent: 6507061 (2003-01-01), Hudgens et al.
Lyeo et al., “Thermal Conductivity of Phase-Change Material Ge2Sb2Te5”, Applied Physics Letters 89, 151904 (2006) Oct. 10, 2006.
Chong et al., “Phase Change Random Access Memory Cell with Superlattice-Like Structure”, Applied Physics Letters 88, 122114 (2006) Mar. 23, 2006.
Chong et al. “Superlattice-Like Phase Change Random Access Memory”, E*POS06 May 31, 2006.
Simkin et al., “Minimum Thermal Conductivity of Superlattices”, Physical Review Letters, vol. 84, No. 5, Jan. 31, 2000.

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