Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Patent
1996-05-28
1999-10-12
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
257684, 257774, 257777, H01L 2940
Patent
active
059659335
ABSTRACT:
Semiconductor devices 340 are formed in semiconductor wafer 300. Contact pads 332 are formed in each die 330. An interconnect connects the contact pads 332 to die surface contact regions 210, 212. Scribe trenches 348 are formed in device wafer 300; corresponding trenches 358 are formed in cover wafer 360. The cover wafer 360 is thinned to open scribe trenches 348. Conductive vias 310-313 connect the contact pads 210, 212 to external surface bump contacts 333.
REFERENCES:
patent: 4232326 (1980-11-01), Neidig et al.
patent: 5202754 (1993-04-01), Bertin et al.
patent: 5481133 (1996-01-01), Hsu
Ports Kenneth A.
Young William R.
Brown Peter Toby
Potter Roy
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