Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-02-28
2006-02-28
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257S434000, C257S680000, C257S704000, C438S048000, C438S057000, C438S060000, C438S064000
Reexamination Certificate
active
07005720
ABSTRACT:
A semiconductor package with a photosensitive chip and a fabrication method thereof are provided. A substrate having a core is prepared. A solder mask layer is applied over a surface of the core and formed with an opening to expose a continuous peripheral portion on the surface of the core. At least one photosensitive chip is mounted on and electrically connected to the substrate. An encapsulation dam is formed on the continuous peripheral portion of the core and surrounds the chip. The dam includes a shoulder portion adjacent to and flush with the solder mask layer, and a protruded support portion surrounding the shoulder portion. A lid is attached to the support portion of the dam for sealing the dam such that the chip is received in a space defined by the substrate, the dam and the lid.
REFERENCES:
patent: 6448665 (2002-09-01), Nakazawa et al.
patent: 6590269 (2003-07-01), Chuang et al.
patent: 6635209 (2003-10-01), Huang
Hsiao Cheng-Hsu
Huang Chien-Ping
Huang Chih-Ming
Corless Peter F.
Jensen Steven M.
Kang Donghee
Siliconware Precision Industries Co. Ltd.
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