Semiconductor package with metalized portions

Details Semiconductor package with metalized portions Semiconductor package with metalized portions

1992-02-11

1994-07-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Entirely of metal except for feedthrough

257704, 257779, H01L 2302, H01L 2312

Patent

active

053291603

ABSTRACT:
In a semiconductor package in which a cover and a substrate are combined with each other in a sealed state, metallized portions consisting of a material of a high solder wettability are provided on the joint surface, which is opposed to the substrate, of the cover, outer side surfaces of the cover, and the portions of the inner side surfaces of the cover which are in the vicinity of the joint surface. These metallized portions are formed so that the height thereof on the outer side surfaces of the cover is larger than that on the inner side surfaces thereof. The metallized portions on the outer side surfaces are formed so that the height thereof at the corner portions of the cover is larger than that at the intermediate portions of the four sides thereof, and the metallized portions on the inner side surfaces are formed so that the height thereof at the intermediate portions of the four sides of the cover is larger than that at the corner portions thereof. This enables the excess and shortage of solder supplied to the joint portions of the substrate and cover constituting the semiconductor package to be prevented.

REFERENCES:
patent: 4914551 (1990-04-01), Anchel et al.
patent: 4949219 (1990-08-01), Moriizumi et al.
patent: 4996589 (1991-02-01), Kajiwara et al.
patent: 5018004 (1991-05-01), Okinaga et al.
patent: 5057909 (1991-10-01), Mok et al.
patent: 5168344 (1992-12-01), Ehlert et al.

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