Semiconductor package using an aluminum nitride substrate

Details Semiconductor package using an aluminum nitride substrate Semiconductor package using an aluminum nitride substrate

1994-05-17

1995-10-31

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

Of specified material other than copper

257736, 257728, 257705, H01L 2302, H01L 2348

Patent

active

054632480

ABSTRACT:
A semiconductor package comprises an aluminum nitride substrate having a semiconductor element mounted thereon, a lead frame junctioned to the side of the aluminum nitride substrate directly contacting the mounted semiconductor element, and a ceramic sealing member junctioned to the aluminum nitride substrate so as to seal the semiconductor element. The lead frame has a coating layer of a nonmagnetic metallic material formed in a thickness of not more than 20 .mu.m on only one of the opposite surfaces of a lead frame matrix made of a ferromagnetic metal to which a bonding wire is to be junctioned. The layer of the nonmagnetic metallic material is formed by any of such thin film forming technique as the vacuum deposition technique, the spattering technique, and the plating technique. The coating layer formed on only one of the opposite surfaces of the lead frame matrix is capable of amply curbing the resistance and the dependency of inductance on frequency. The aluminum nitride substrate is capable of imparting an ideal ability to radiate heat. The semiconductor package enables a high-speed quality semiconductor element having such a high system clock frequency as is not less than 50 MHz to be operated stably.

REFERENCES:
patent: 4229758 (1980-10-01), Ikari
patent: 4805009 (1989-02-01), Pryor et al.
patent: 4942454 (1990-07-01), Mori et al.
patent: 5015803 (1991-05-01), Mahulikar et al.
patent: 5087963 (1992-02-01), Kaneda et al.
patent: 5138431 (1992-08-01), Huang et al.
patent: 5168126 (1992-12-01), Matsumoto et al.
patent: 5227583 (1993-07-01), Jones
patent: 5256901 (1993-10-01), Ohashi et al.
patent: 5302852 (1994-04-01), Kaneda et al.
patent: 5329158 (1994-07-01), Lin

Affiliated with

Also associated with

Rating

Semiconductor package using an aluminum nitride substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor package using an aluminum nitride substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor package using an aluminum nitride substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1774842