Semiconductor package production method and semiconductor...

Details Semiconductor package production method and semiconductor... Semiconductor package production method and semiconductor...

2005-11-29

2005-11-29

Smith, Brad (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

C257S787000, C257S788000

Reexamination Certificate

active

06969919

ABSTRACT:
A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 μm or thicker. A semiconductor device made by this method and a wafer for use with this method.

REFERENCES:
patent: 6303982 (2001-10-01), Murakami et al.

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