Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-12-18
2010-06-01
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S678000, C257S679000, C257S690000, C257S773000, C257S778000, C257SE23039, C257SE23065, C257SE23067, C257SE23176, C257SE21503
Reexamination Certificate
active
07728422
ABSTRACT:
One embodiment of a semiconductor package described herein includes a substrate having a first through-hole extending therethrough; a conductive pattern overlying the substrate and extending over the first through-hole; a first semiconductor chip facing the conductive pattern such that at least a portion of the first semiconductor chip is disposed within the first through-hole; and a first external contact terminal within the first through-hole and electrically connecting the conductive pattern to the first semiconductor chip.
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English language abstract of Japanese Publication No. 07-276871.
English language abstract of Korean Publication No. 1998-043253.
Choi Ki-won
Kim Dong-han
Clark Jasmine J
Muir Patent Consulting, PLLC
Samsung Electronics Co,. Ltd.
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