Semiconductor package having wraparound metallization

Details Semiconductor package having wraparound metallization Semiconductor package having wraparound metallization

1990-06-22

1993-08-10

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257698, 257700, 257706, 257719, 257774, 257773, 257784, H01L 2302, H01L 2312, H01L 2348, H01L 2940

Patent

active

052352110

ABSTRACT:
Semiconductor package and method in which a cavity is provided for a chip or die, a bonding shelf extends peripherally of the cavity, and a layer of metallization extends along the under side of the shelf, wraps around the inner peripheral edge of the shelf and extends along the inner margin of the upper surface of the shelf to form a conductive ring to which a lead from the chip is bonded. Additional bonding pads are formed on the upper surface of the shelf, and additional leads from the chip are attached to these pads. In one embodiment, locating fingers align the chip precisely within the cavity.

REFERENCES:
patent: 3908185 (1975-09-01), Martin
patent: 4910584 (1990-03-01), Mizuo
patent: 4922324 (1990-05-01), Sudo

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