Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-01-11
2011-01-11
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S776000, C257S781000, C257SE23062, C438S629000, C438S637000
Reexamination Certificate
active
07868459
ABSTRACT:
A semiconductor package is disclosed including a first capture pad isolated from an adjacent second capture pad by an insulator; a first plurality of electrically active vias connecting the first capture pad to the second capture pad; a third capture pad isolated from the second capture pad by an insulator; and a second plurality of electrically active vias connecting the second capture pad to the third capture pad. Each via of the first plurality of active vias is non-aligned with each via of the second plurality of active vias. The structure provides reduction of strain on the vias when a shear force is applied to a ball grid array used therewith while minimizing the degradation of the electrical signals.
REFERENCES:
patent: 6313537 (2001-11-01), Lee et al.
patent: 6542352 (2003-04-01), Devoe et al.
patent: 6900395 (2005-05-01), Jozwiak et al.
patent: 2001/0010407 (2001-08-01), Ker et al.
Audet Jean
Guerin Luc
Questad David L.
Russell David J.
Hoffman Warnick LLC
International Business Machines - Corporation
Li Wenjie
Nguyen Thinh T
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