Semiconductor package having an aluminum nitride substrate

Details Semiconductor package having an aluminum nitride substrate Semiconductor package having an aluminum nitride substrate

1996-11-08

1997-12-30

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257697, 257700, 257704, 257705, H01L 23053, H01L 2312

Patent

active

057033978

ABSTRACT:
A semiconductor ceramic multilayer package comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to the semiconductor element, connecting terminals connected to the wiring pattern and disposed on the other surface of the aluminum nitride substrate, and a sealing member connected to the aluminum nitride substrate with a metallic bonding layer or a glass layer having a thickness of not more than 100 .mu.m in such a manner as to seal the semiconductor element possesses a notably improved heat-radiating property and accomplishes the object of increasing the number of pins and reducing the size of package.

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patent: 5311402 (1994-05-01), Kobayashi et al.
Patent Abstracts of Japan, vol. 10, No. 24, (E-377); dated Jan. 30, 1986.
Harada et al., "Fine Pitch High-Density PGA Package," IEEE International Solid-State Circuits Conference, Digest of Technical Papers, pp. 154, 155, 288 (1990).

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