Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2009-07-13
2011-12-13
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S734000, C257S737000, C257S738000, C257S779000, C257S780000, C257S781000, C257S784000, C257S787000, C257SE21508, C257SE21175, C257SE23020, C257SE23021, C438S612000, C438S613000, C205S123000
Reexamination Certificate
active
08076786
ABSTRACT:
A wire bonding structure includes a chip and a bonding wire. The chip includes a base material, at least one first metallic pad, a re-distribution layer and at least one second metallic pad. The first metallic pad is disposed on the base material. The re-distribution layer has a first end and a second end, and the first end is electrically connected to the first metallic pad. The second metallic pad is electrically connected to the second end of the re-distribution layer. The bonding wire is bonded to the second metallic pad.
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Chinese Office Action for counterpart application No. 200910146170, mailed Nov. 9, 2010.
Chang Hsiao Chuan
Chen Jian Cheng
Hung Chang Ying
Lai Yi Shao
Tong Ho Ming
Advanced Semiconductor Engineering Inc.
Harriston William
Mandala Victor A
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