Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2007-10-29
2009-11-17
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S700000, C257S701000, C361S760000, C361S765000
Reexamination Certificate
active
07619316
ABSTRACT:
A semiconductor package includes: a build-up wiring layer including a metal wiring layer and an insulation resin layer; and a low thermal expansion material layer having a coefficient of thermal expansion closer to that of a semiconductor chip mounted on the build-up wiring layer as compared with the insulation resin layer of the build-up wiring layer, the low thermal expansion material layer being bonded to an entire region of a rear surface of the build-up wiring layer corresponding to a region of a front surface of the build-up wiring layer on which the semiconductor chip is mounted.
REFERENCES:
patent: 7307852 (2007-12-01), Inagaki et al.
patent: 7462784 (2008-12-01), Kariya et al.
patent: 2005/0029658 (2005-02-01), Sugiyama et al.
patent: 2006/0175083 (2006-08-01), Muramatsu et al.
patent: 2001-007250 (2001-01-01), None
Matsuki Ryuichi
Miyamoto Takaharu
Ueda Keisuke
Dang Phuc T
Drinker Biddle & Reath LLP
Shinko Electric Industries Co. Ltd.
LandOfFree
Semiconductor package and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor package and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor package and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4140415