Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2010-06-21
2011-12-06
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C438S109000
Reexamination Certificate
active
08072064
ABSTRACT:
The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a first chip and a second chip. The first chip comprises a first active surface, at least one first non-top metal layer and a plurality of first signal coupling pads. The first non-top metal layer is disposed adjacent to and spaced apart from the first active surface by a second distance. The first signal coupling pads are disposed on the first non-top metal layer. The second chip is electrically connected to the first chip. The second chip comprises a second active surface, at least one second non-top metal layer and a plurality of third signal coupling pads. The second active surface faces the first active surface of the first chip. The second non-top metal layer is disposed adjacent to and spaced apart from the second active surface by a fourth distance. The third signal coupling pads are disposed on the second non-top metal layer and capacitively coupled to the first signal coupling pads of the first chip, so as to provide proximity communication between the first chip and the second chip. Whereby, the gap variation between the first signal coupling pads of the first chip and the third signal coupling pads of the second chip is under stringent control of the second distance and the fourth distance. Therefore, the mass-production yield of the semiconductor package is increased.
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Chang Hsiao-Chuan
Chen Ming-Kun
Cheng Ming-Hsiang
Lai Yi-Shao
Tsai Tsung-Yueh
Advanced Semiconductor Engineering Inc.
Booth Richard A.
McCracken & Frank LLC
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