Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2005-08-23
2005-08-23
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S777000, C257S783000
Reexamination Certificate
active
06933605
ABSTRACT:
A semiconductor package comprises a first chip, a substrate, a middle layer, a second chip, and an encapsulant. The first chip has an active surface and a high-frequency element defining a high-frequency area on the active surface. The substrate supports the first chip and is electrically connected to the first chip. The middle layer is disposed on the first chip and has a recess corresponding to the high-frequency area. The second chip is disposed on the middle layer and electrically connected to either the first chip or the substrate. The encapsulant encapsulates the first chip, the middle layer, the second chip, and a part of the substrate.
REFERENCES:
patent: 5717249 (1998-02-01), Yoshikawa et al.
patent: 6414384 (2002-07-01), Lo et al.
patent: 6740980 (2004-05-01), Hirose
Chiu Chi Tsung
Tao Su
Wu Sung Mao
Advanced Semiconductor Engineering Inc.
Andújar Leonardo
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