Semiconductor-oxide etchant

Details Semiconductor-oxide etchant Semiconductor-oxide etchant

1976-09-27

1977-10-04

Van Horn, Charles E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 3, 156662, 252 793, H01L 21316

Patent

active

040522539

ABSTRACT:
An etchant for semiconductors having a high preferential etch rate for doped silica particularly phosphorous doped silica, consisting of a 20:20:1 mixture, by volume, of 37% hydrochloric acid, deionized water, and 49% hydrofluoric acid. The etchant is particularly useful in a semiconductor process wherein an emitter opening is washed out following the diffusion thereof.

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patent: 3841904 (1974-10-01), Chiang
Briska et al, IBM Technical Disclosure, "Etchant for Cleaning Silicon Surfaces" vol. 16, No. 10, (1974), p. 3274.

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