Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Patent
1998-06-02
2000-06-27
Wilczewski, Mary
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
438113, 438460, 438973, 438975, H01L 3300, H01L 2186, H01L 21786
Patent
active
060805994
ABSTRACT:
The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a <11-20> orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.
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Fujimoto Hidetoshi
Ishikawa Masayuki
Kokubun Yoshihiro
Nishikawa Yukie
Rennie John
Kabushiki Kaisha Toshiba
Lin Yung A.
Wilczewski Mary
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