Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-11-30
1994-07-26
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 21, 257 22, 257 95, 257465, 257466, 372 48, 372 45, H01L 3300
Patent
active
053329104
ABSTRACT:
A semiconductor light-emitting device includes a plurality of semiconductor rods, each of which has a pn junction. The semiconductor rods are formed on a semiconductor substrate such that the plurality of semiconductor rods are arranged at a distance substantially equal to an integer multiple of the wavelength of light emitted from the semiconductor rod. With such devices, various novel optical devices such as a micro-cavity laser of which the threshold current is extremely small and a coherent light-emitting device having no threshold value can be realized.
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Haraguchi Keiichi
Hiruma Kenji
Kakibayashi Hiroshi
Katsuyama Toshio
Masuhara Toshiaki
Hitachi , Ltd.
Mintel William
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