Semiconductor optical device and semiconductor optical...

Details Semiconductor optical device and semiconductor optical... Semiconductor optical device and semiconductor optical...

2004-07-21

2008-08-19

Thompson, Timothy (Department: 2873)

Optical: systems and elements

Optical modulator

Light wave temporal modulation

C359S238000, C257S449000

Reexamination Certificate

active

07414767

ABSTRACT:
A semiconductor optical device, which includes a semiconductor substrate, an electro-absorption modulator, and at least one optical device is monolithically integrated on the semiconductor substrate. An insulative layer surrounds the electro-absorption modulator and the optical devices on the semiconductor substrate, at least two metallic pads, one of which being an electrode of the modulator, are formed at a distance from each other on the insulative layer. A plurality of metallic wires are adapted for electrically connecting the electro-absorption modulator to the metallic pads and adjusting a value of inductance of the electro-absorption modulator. The metallic wires are formed on the insulative layer. A dielectric layer formed under the insulative layer provides a minimizing of parasitic capacitance generated in the metallic pads and the metallic wires by being formed under the metallic pads and the metallic wires.

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Kotaka, Isamu; et al.; “High-Speed (20Gbit/s) Low-Drive-Voltage (2VP-P) Strained-InGaAsP MQW Modulator/DFB Laser Light Source;” May 1994; vol. J77-C-1, No. 5.

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