Semiconductor on silicon (SOI) transistor with a halo implant

Details Semiconductor on silicon (SOI) transistor with a halo implant Semiconductor on silicon (SOI) transistor with a halo implant

1997-03-07

1999-08-10

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257347, 257408, H01L 2701, H01L 2712, H01L 310392

Patent

active

059362782

ABSTRACT:
A semiconductor over insulator transistor (100) includes a semiconductor mesa (36) formed over an insulating layer (34) which overlies a semiconductor substrate (32). Source and drain regions (66, 68) of a first conductivity type are formed at opposite ends of the mesa. A body node (56) of a second conductivity type is located between the source and drain regions in the mesa. A gate insulator (40) and a gate electrode (46) lie over the body node. Halo implants (54, 56) are placed to completely separate the source and drain regions from the body node, or channel regions, for improving short channel effect. The transistor is useful as a pass gate and as a peripheral transistor in a DRAM, and also is useful in digital and analog applications and in low power applications.

REFERENCES:
patent: 4899202 (1990-02-01), Blake et al.
patent: 4965213 (1990-10-01), Blake
patent: 5160989 (1992-11-01), Houston
patent: 5185280 (1993-02-01), Houston et al.
patent: 5359219 (1994-10-01), Hwang
patent: 5656844 (1997-08-01), Klein et al.
Kumamoto, et al., "An SOI Structure For Flash A/D Converter," IEEE Journal of Solid-State Circuits, vol. 23, No. 1, Feb. 1988, pp. 198-201.

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