Semiconductor-on-insulator transistor having a doping profile fo

Details Semiconductor-on-insulator transistor having a doping profile fo Semiconductor-on-insulator transistor having a doping profile fo

1995-07-27

1997-08-12

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257353, H01L 2701, H01L 2712, H01L 2976

Patent

active

056568444

ABSTRACT:
A semiconductor-on-insulator transistor (10) has a channel region (30) in a semiconductor film (16) under a gate insulating layer (26). The channel region has a top dopant concentration N.sub.T at a top surface (32) of the film that is significantly greater than a bottom dopant concentration N.sub.B at a bottom surface (34) of the film. This non-uniform doping profile provides an SOI device that operates in a fully-depleted mode, yet permits thicker films without a significant degradation of sub-threshold slope.

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