Semiconductor on insulator transistor

Details Semiconductor on insulator transistor Semiconductor on insulator transistor

1990-12-13

1992-03-10

James, Andrew J.

Fishing, trapping, and vermin destroying

357 235, 357 2312, 357 42, 437 45, 437 84, 307298, 3073032, H01L 2701, H01L 2713, H01L 2978, H01L 2986

Patent

active

050953486

ABSTRACT:
The described embodiments of the present invention provide a method and structure for actively controlling the voltage applied to the channel of field effect transistors. In the described embodiments, a transistor connected to the channel region is fabricated. The channel transistor has opposite conductivity type to the transistor using the main channel region. The source of the channel transistor is connected to the channel and the drain of the channel transistor is connected to a reference voltage. The same gate is used to control the channel transistor and the main transistor. When a voltage which causes the main transistor to be on is applied, the channel transistor is off, thus allowing the channel to float and allowing higher drive current. On the other hand, when a voltage to turn off the main transistor is applied, the channel transistor is turned on, thus clamping the channel region to the reference voltage. This allows for consistent threshold voltage control of the main transistor.

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