Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-21
2009-08-25
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27112, C257SE21320, C257SE21331, C438S479000, C438S480000, C438S517000, C438S458000
Reexamination Certificate
active
07579654
ABSTRACT:
Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.
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Couillard James Gregory
Lehuede Philippe
Vallon Sophie A
Corning Incorporated
Dernier Matthew B.
Ho Tu-Tu V
Schaeberk Timothy M.
Watson Bruce P.
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