Semiconductor on insulator static random access meory cell utili

Details Semiconductor on insulator static random access meory cell utili Semiconductor on insulator static random access meory cell utili

1993-10-29

1995-03-21

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Flip-flop

257347, 257349, 257350, 257358, 257359, 257379, 257380, 257903, G11C 1400

Patent

active

054002770

ABSTRACT:
A resistor is connected to the source/drain of a transistor and used as a load element of a memory cell. A trench is formed which extends from a top of the wafer through an isolation region of the wafer to a silicon base of the wafer. The silicon base of the wafer is located below the isolation region of the wafer. A resistive layer of material is formed in the trench. The resistive layer extends from the top of the wafer through the isolation region of the wafer and is electrically connected to the silicon base of the wafer. The resistor is connected to other circuitry on the wafer, for example, by implanting into the wafer atoms of a first conductivity type into a region immediately adjacent to the resistive layer of material in the trench. In the preferred embodiment, the resistive layer of material is deposited polysilicon.

REFERENCES:
patent: 4933739 (1990-06-01), Harris
T. Ohzone, T. Hirao, K. Tsuji, S. Horiuchi, and S. Takayanagi, A 2K.times.8-Bit Static MOS RAM with a New Memory Cell Structure, IEEE J. Solid-State Circuits, vol. SC-15, Apr. 1980, pp. 201-205.
Laura Peters, SOI Takes Over Where Silicon Leaves Off, Semiconductor International, Mar. 1993, pp. 48-51.
H. H. Hosack, Recent Progress in SOI Materials For the Next Generation of IC Technology, The Electrochemical Society Interface, Spring 1993, pp. 51-57.

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