Semiconductor-on-insulator (SOI) strained active areas

Details Semiconductor-on-insulator (SOI) strained active areas Semiconductor-on-insulator (SOI) strained active areas

2006-09-15

2009-02-03

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21321

Reexamination Certificate

active

07485929

ABSTRACT:
Differentially strained active regions for forming strained channel semiconductor devices and a method of forming the same, the method including providing a semiconductor substrate comprising a lower semiconductor region, an insulator region overlying the lower semiconductor region and an upper semiconductor region overlying the insulator region; forming a doped area of the insulator region underlying a subsequently formed NMOS active region; patterning the upper semiconductor region to form the NMOS active region and a PMOS active region; carrying out a thermal oxidation process to produce a differential-volume expansion in the PMOS active region with respect to the NMOS active region; forming recessed areas comprising the insulator region adjacent either side of the PMOS active region; and, removing layers overlying the upper semiconductor region to produce differentially strained regions comprising the PMOS and NMOS active regions.

REFERENCES:
patent: 2001/0003364 (2001-06-01), Sugawara et al.
patent: 2003/0085424 (2003-05-01), Bryant et al.
patent: 2003/0201497 (2003-10-01), Inoue et al.

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