Semiconductor on insulator (SOI) device including a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S347000, C257SE21351, C257SE21364

Reexamination Certificate

active

07915658

ABSTRACT:
A silicon on insulator (SOI) device is provided. The device includes an MOS capacitor coupled between voltage busses and formed in a monocrystalline semiconductor layer overlying an insulator layer and a semiconductor substrate. The device includes at least one electrical discharge path for discharging potentially harmful charge build up on the MOS capacitor. The MOS capacitor has a conductive electrode material forming a first plate of the MOS capacitor and an impurity doped region in the monocrystalline silicon layer beneath the conductive electrode material forming a second plate. A first voltage bus is coupled to the first plate of the capacitor and to an electrical discharge path through a diode formed in the semiconductor substrate and a second voltage bus is coupled to the second plate of the capacitor.

REFERENCES:
patent: 6303414 (2001-10-01), Ang et al.
patent: 6452234 (2002-09-01), Mahanpour
patent: 6844223 (2005-01-01), Ko et al.
patent: 7154151 (2006-12-01), Minami
patent: 7205190 (2007-04-01), Okihara
patent: 2002/0094629 (2002-07-01), Belleville et al.
patent: 2005/0269642 (2005-12-01), Minami
patent: 2006/0237726 (2006-10-01), Iwamatsu et al.
patent: 2 847 715 (2004-05-01), None

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