Semiconductor-on-insulator silicon wafer and method of...

Details Semiconductor-on-insulator silicon wafer and method of... Semiconductor-on-insulator silicon wafer and method of...

2006-03-28

2006-03-28

Fourson, George (Department: 2823)

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

C438S459000

Reexamination Certificate

active

07018484

ABSTRACT:
A method of fabricating a semiconductor-on-insulator semiconductor wafer is described that includes providing first and second silicon substrates. A first thin layer of silicon dioxide is formed on one substrate and a second thicker layer of silicon dioxide is formed on the other substrate. A layer of rare earth is deposited, generally by evaporation, on the thicker layer of silicon dioxide. The rare earth layer is placed on the thin silicon dioxide layer and the structure is bonded by annealing to form a layer of rare earth silicon dioxide. A portion of the one substrate is removed to form a thin crystalline active layer on preferably the rare earth silicon dioxide layer, but potentially on the thicker silicon dioxide layer.

REFERENCES:
patent: 6114188 (2000-09-01), Oliver et al.
patent: 6645830 (2003-11-01), Shimoda et al.
patent: 6818530 (2004-11-01), Shimoda et al.
patent: 2003/0224582 (2003-12-01), Shimoda et al.
patent: 2005/0095815 (2005-05-01), Bojarczuk et al.

Affiliated with

Also associated with

Rating

Semiconductor-on-insulator silicon wafer and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor-on-insulator silicon wafer and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor-on-insulator silicon wafer and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3584897