Semiconductor on insulator devices

Details Semiconductor on insulator devices Semiconductor on insulator devices

1994-05-31

1999-07-20

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257403, H01L 2701, H01L 2712, H01L 2976

Patent

active

059259159

ABSTRACT:
A pair of complementary MOSFET's having regions of a common conductivity type separating the source and drain regions thereof which are provided on a support structure formed of an electrical insulating layer on a semiconductor material base. MOSFET's has a gate oxide layer on which is provided a gate semiconductor structure, with these structures each being of a common conductivity type and located across the gate oxide layers from the corresponding common conductivity type region.

REFERENCES:
patent: 5281840 (1994-01-01), Sarma
Japanese Journal of Applied Physics, vol. 30, No. 12B, Dec., 1991, pp. 3710-3714, "Low-Temperature Operation of Polycrystalline Silicon Thin-Film Transistors" by Mori et al.
IEEE Electron Device Letters, vol. 12, No. 5, May 1991, p, 203-205, "Avalanche-Induced Effects in Polysilicon Thin-Film Transistors" by Hack et al.
Proceedings of the First Symposium on Thin Film Transistors Technologies, vol. 92-24, p, 45-58, "Physics of Amorphous and Poly-crystalline Silicon Thin Film Transistors" by Hack.
IEDM-82, "Novel SOI CMOS Design Using Ultra Thin Near Intrinsic Substrate", by Malhi et al., p,107-p, 110.
Appl. Phys. Lett. 52 (22), May 30, 1988, "Mass-dispersive recoil spectrometry studies of oxygen and nitrogen redistribution in ion-beam-synthesized buried oxynitride layers in silicon", by Whitlow et al., p, 1871-p, 1873.
"Properties of ESFI MOS Transistors Due to the Floating Substrate and the Finite Volume," J. Tihanyi et al, IEEE Transitions on Electron Devices, vol. Ed-22, No. 11, Nov. 1975, pp. 1017-1023.
"Improved Subthreshold Characteristics of n-Channel SOI Transistors," J. Davis et al, IEEE Electron Device Letters, vol. EDL-7, No. 10, Oct. 1986, pp. 570-572.
"Reduction of Kink Effect in Thin-Film SOI MOSFET's," J-P. Colinge, IEEE Electron Device Letters, vol. 9, No. 2, Feb. 1988, pp. 97-99.
"Dual-MOSFET Structure for Suppression of Kink in SOI MOSFET's at Room and Liquid Helium Temperatures," M-H Gao et al, Proceedings 1990, IEEE SOS/SOI Technology Conference, pp. 13-14.

Affiliated with

Also associated with

Rating

Semiconductor on insulator devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor on insulator devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor on insulator devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1324005