Semiconductor nonvolatile storage element and method of...

Details Semiconductor nonvolatile storage element and method of... Semiconductor nonvolatile storage element and method of...

2006-12-05

2010-02-23

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S300000, C257SE27104

Reexamination Certificate

active

07667252

ABSTRACT:
To provide a semiconductor nonvolatile storage device capable of applying distributed voltage efficiently to a ferroelectric capacitor in a semiconductor nonvolatile storage device having an MFMIS structure without enlarging a memory cell area and a method of fabricating the same, a ferroelectric nonvolatile storage element is constructed by a structure successively laminated with a first insulator layer (3), a first conductor layer (4), a ferroelectric layer (5) and a second conductor layer (6) on a channel region and is constructed by a structure having a third conductor (9) and a fourth conductor (10) respectively laminated on a source region and a drain region, in which the third conductor (9) and the fourth conductor (10) are opposed to each other via the first conductor layer (4) and a second insulator thin film (11).

REFERENCES:
patent: 5384729 (1995-01-01), Sameshima
patent: 6531781 (2003-03-01), Tseng
patent: 6642563 (2003-11-01), Kanaya
patent: 6784473 (2004-08-01), Sakai et al.

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