Semiconductor nonvolatile memory with wide memory window and lon

Details Semiconductor nonvolatile memory with wide memory window and lon Semiconductor nonvolatile memory with wide memory window and lon

1992-04-27

1994-06-07

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257406, 257411, 257637, 257640, 257645, 437 42, H01L 2934, H01L 2968, H01L 2978

Patent

active

053192290

ABSTRACT:
A semiconductor Nonvolatile memory. The memory cell has the following structure. Within a P type silicon substrate 3, there are provided an n.sup.+ type source 26 and an n.sup.+ type drain 28, the two regions forming a channel region 30. On top of the channel region 30 there are laminated a silicon dioxide film 5, an insulating layer which consists of the nitride film 18a,18b and 18c, and the oxide film 20a,20b and 20c. Further, on top of the insulating layer, there is formed a polysilicon film 24, which serves as a control electrode. By using the memory cell and row select transistor a semiconductor nonvolatile memory can be constructed.

REFERENCES:
patent: 4288470 (1981-09-01), Bate et al.

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