Semiconductor nonvolatile memory with low programming voltage

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S314000, C257S316000, C257S321000, C257S324000, C257S325000

Reexamination Certificate

active

06853027

ABSTRACT:
A semiconductor nonvolatile memory cell comprised of a p-type silicon well12, an n+drain8and an n+source10, the source and the drain regions defining an channel region7. On top of the well12there are laminated a thin silicon dioxide film2served as a gate oxide, a polysilicon layer32and a SrTiO3layer34comprised of a high dielectric substance, in respective order. Further on top of these layers, there is formed a polysilicon layer36served as gate electrode. By using the memory cell and appropriate select transistors, a semiconductor nonvolatile memory device is constructed.

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