Semiconductor nonvolatile memory, method of data programming of

Details Semiconductor nonvolatile memory, method of data programming of Semiconductor nonvolatile memory, method of data programming of

1998-04-23

2000-06-06

Dinh, Son T.

Static information storage and retrieval

Floating gate

Particular connection

36518512, 36518525, 365204, G11C 1604

Patent

active

060727217

ABSTRACT:
A semiconductor nonvolatile memory device where the source line is selected and the channel portions of NAND strings adjacent in the row direction are charged up to the programming prohibit potential, the programming prohibit potential charged in the channel portion of the NAND strings is discharged to the bit lines according to the content of data to be programmed, and then the programming voltage is supplied to the selected word line and page programming is carried out together for memory transistors connected to the selected word lines. By this, the memory is suited for operation by a single power supply at a low voltage, enables easy layout of the data latch circuits for every bit line, and in addition performs a data programming operation with a good disturb tolerance.

REFERENCES:
patent: 5673223 (1997-09-01), Park
patent: 5877982 (1999-03-01), Iwashahi
patent: 5914903 (1999-06-01), Kanma et al.
patent: 5923587 (1999-07-01), Choi

Affiliated with

Also associated with

Rating

Semiconductor nonvolatile memory, method of data programming of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor nonvolatile memory, method of data programming of , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor nonvolatile memory, method of data programming of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2219600