Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-23
1997-04-08
Ng o, Ng an V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257324, 257325, 257411, H01L 29788, H01L 29792
Patent
active
056190514
ABSTRACT:
In a floating-gate type nonvolatile memory cell, the second dielectric film between the floating gate and the control gate is made very higher in relative permittivity than the first dielectric film under the floating gate such that the relation .epsilon..sub.2 /.epsilon..sub.1 .gtoreq.13 and the relation t.sub.2 /t.sub.1 .gtoreq..epsilon..sub.2 /.epsilon..sub.1 hold, where .epsilon.and t represent relative permittivity and film thickness, respectively and subscripts 1 and 2 represent the first and second dielectric films, respectively. Strontium titanate, barium strontium titanate or lead zirconate-titanate is suitable as the material of the second dielectric film. In the case of, e.g. barium strontium titanate film, the proportion of Sr to Ba may vary in the direction of the film thickness. The second dielectric film may be made up of two (or more) different dielectric layers. The memory cell is low in writing and erasing voltages and excellent in endurance in terms of write/erase cycles.
REFERENCES:
patent: 3731163 (1973-05-01), Shuskus
patent: 4794565 (1988-12-01), Wu et al.
patent: 4888630 (1989-12-01), Paterson
patent: 5300799 (1994-04-01), Nakamura et al.
patent: 5304503 (1994-04-01), Yoon et al.
Y. Hisamune et al.; "A High Capacitive-Coupling Ratio (HiCR) Cell for 3 V-only 64 Mbit and Future Flash Memories"; IEDM Technical Digest (1993) pp. 19-22.
NEC Corporation
Ng o Ng an V.
LandOfFree
Semiconductor nonvolatile memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor nonvolatile memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor nonvolatile memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2399162