Semiconductor non-volatile memory device improved in verifying o

Details Semiconductor non-volatile memory device improved in verifying o Semiconductor non-volatile memory device improved in verifying o

1992-09-10

1994-03-22

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Erase

365236, 365185, 36518909, 36518911, G11C 1140

Patent

active

052970957

ABSTRACT:
When an electrically erasable and program read only memory device enters an erasing mode of operation, electrons are evacuated from floating gate electrodes of the floating gate type field effect transistors serving as memory cells, and the evacuation is continued over a time period instructed from an internal memory circuit so that the memory cells are prevented from depletion mode due to excess evacuation as well as from non-erased state due to insufficient evacuation.

REFERENCES:
patent: 5097446 (1992-03-01), Shoji et al.

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