Semiconductor non-volatile memory device having floating gate ty

Details Semiconductor non-volatile memory device having floating gate ty Semiconductor non-volatile memory device having floating gate ty

1997-10-17

2000-05-30

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257375, 438234, H01L 2976

Patent

active

060693894

ABSTRACT:
A semiconductor flash memory device includes floating gate type field effect transistors serving as memory cells, field effect transistors for forming peripheral circuits and bipolar transistors for forming other peripheral circuits expected to drive heavy load at high speed, and both of the floating gate electrodes and the emitter electrodes and both of the control gate electrodes and the gate electrodes are patterned from a first doped polysilicon and a second doped polysilicon so as to simplify a process sequence for fabricating the semiconductor flash memory device.

REFERENCES:
patent: 5005066 (1991-04-01), Chen
patent: 5248624 (1993-09-01), Icel et al.

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