Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-12-08
1994-06-28
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257321, 365185, H01L 2968
Patent
active
053249720
ABSTRACT:
According to this invention, a semiconductor non-volatile memory device includes a semiconductor substrate, insulating films formed on the semiconductor substrate and having at least two types of gate insulating films having different thicknesses and a first conductive film formed on the insulating films and electrically floating from the semiconductor substrate through the insulating films. These at least two types of gate insulating films include a first insulating film formed on said semiconductor substrate and a first diffusion layer of a conductivity type and a second insulating film formed on said semiconductor substrate and a second diffusion layer, of the opposite conductivity type, which is isolated from the first diffusion layer. The first conductive film is formed on the first and second insulating films. A part of the first insulating film between the first conductive film and the first diffusion layer is constituted by a third insulating film having a thickness smaller than that of the first insulating film.
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Roger Cuppens, et al., "An EEPROM for Microprocessors and Custom Logic", IEEE ISSCC Tech. Dig., pp. 268, Feb. 1984.
Masataka Takebuchi, et al., "A Novel Integration Technology of EEPROM Embedded CMOS LOGIC VLSI Suitable for ASIC Applications", IEEE CICC Proceedings, 1992.
Ogura Hidemitsu
Takebuchi Masataka
Tohyama Daisuke
Bowers Courtney A.
Jackson Jerome
Kabushiki Kaisha Toshiba
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