Semiconductor non-volatile ferroelectric memory transistor accom

Details Semiconductor non-volatile ferroelectric memory transistor accom Semiconductor non-volatile ferroelectric memory transistor accom

1996-11-12

1997-11-18

Yoo, Do Hyun

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 257295, G11C 1122

Patent

active

056894562

ABSTRACT:
A semiconductor non-volatile ferroelectric memory transistor has a lower paraelectric capacitor for creating a conductive channel between a source region and a drain region and an upper ferroelectric capacitor stacked on the lower paraelectric capacitor for storing a data bit in the form of remanence in a ferroelectric layer, and a paraelectric capacitor is connected between the channel region and the upper electrode of the lower paraelectric capacitor so as to increase a potential difference applied across the ferroelectric layer, thereby improving information storing characteristics.

REFERENCES:
patent: 5517445 (1996-05-01), Imai et al.
patent: 5541870 (1996-07-01), Mihara et al.
patent: 5559733 (1996-09-01), McMillan et al.
patent: 5579257 (1996-11-01), Ta

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