Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-16
2008-03-11
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27046, C257S374000, C257S382000, C438S221000, C438S199000
Reexamination Certificate
active
07342284
ABSTRACT:
A method of manufacturing a metal-oxide-semiconductor (MOS) transistor device is disclosed. A gate dielectric layer is formed on an active area of a substrate. A gate electrode is patterned on the gate dielectric layer. The gate electrode has vertical sidewalls and a top surface. A liner is formed on the vertical sidewalls of the gate electrode. A nitride spacer is formed on the liner. An ion implanted is performed to form a source/drain region. After salicide process, an STI region that isolates the active area is recessed, thereby forming a step height at interface between the active area and the STI region. The nitride spacer is removed. A nitride cap layer that borders the liner is deposited. The nitride cap layer has a specific stress status.
REFERENCES:
patent: 6468904 (2002-10-01), Chen et al.
patent: 2007/0164357 (2007-07-01), Clevenger et al.
Cheng Tzyy-Ming
Huang Cheng-Tung
Hung Wen-Han
Shen Tzer-Min
Sheng Yi-Chung
Ho Tu-Tu
Hsu Winston
United Microelectronics Corp.
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