Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2011-05-17
2011-05-17
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S675000, C257S706000, C257S707000, C257S717000, C257S796000, C257SE23087, C257SE23101
Reexamination Certificate
active
07944045
ABSTRACT:
A semiconductor module and a method of manufacturing the same are disclosed including a semiconductor element having an electrode, a heat radiation plate placed in thermal contact with a main surface of the semiconductor element and electrically connected to the electrode thereof, an insulation body directly formed on an outside surface of the heat radiation plate, a metallic body directly formed on an outside surface of the insulation body and having a thickness lower than that of the insulation body, and a mold resin unitarily molding the heat radiation plate, the semiconductor element and the insulation body. The insulation body is covered with the metallic body and the mold resin and the metallic body has an outside surface exposed to an outside of the mold resin.
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Japanese Office Action dated Feb. 23, 2010, issued in corresponding Japanese Application No. 2008-053848, with English translation.
Mamitsu Kuniaki
Noritake Chikage
Teshima Takanori
Denso Corporation
Nixon & Vanderhye PC
Soward Ida M
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