Semiconductor methods and structures

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S053000

Reexamination Certificate

active

11019693

ABSTRACT:
A method and a structure are provided for preventing lift-off of a semiconductor monitor pattern from a substrate. A semiconductor structure and a semiconductor monitor structure are formed on a substrate. A material layer is formed covering the semiconductor monitor structure. A part of the semiconductor structure is removed without removing the semiconductor monitor structure, by using the material layer as an etch protection layer. A mask for the method is also provided. The mask includes a clear area and a dark area. The dark area prevents a semiconductor monitor structure from being subjected to exposure so as to form a material layer covering the semiconductor monitor structure and prevent removal of the semiconductor monitor structure from the substrate while a part of a semiconductor structure is removed.

REFERENCES:
patent: 5043043 (1991-08-01), Howe et al.
patent: 5252881 (1993-10-01), Muller et al.
patent: 5459602 (1995-10-01), Sampsell
patent: 5510299 (1996-04-01), Li et al.
patent: 5600190 (1997-02-01), Zettler
patent: 5660680 (1997-08-01), Keller
patent: 5668062 (1997-09-01), Hyun et al.
patent: 6150186 (2000-11-01), Chen et al.
patent: 6337027 (2002-01-01), Humphrey

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor methods and structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor methods and structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor methods and structures will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3775158

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.