Semiconductor method having silicon-diffused metal wiring layer

Details Semiconductor method having silicon-diffused metal wiring layer Semiconductor method having silicon-diffused metal wiring layer

2006-12-29

2010-06-15

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257SE23145, C257SE21593

Reexamination Certificate

active

07737555

ABSTRACT:
In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer.

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