Semiconductor mesa structured optical processing devices, with a

Details Semiconductor mesa structured optical processing devices, with a Semiconductor mesa structured optical processing devices, with a

1989-07-21

1991-06-11

Hille, Rolf

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 17, 357 52, 357 64, 250211R, 250211J, 2504931, 350 9612, 350600, H01L 29161, H01L 29205, H01L 29225, H01L 2934

Patent

active

050236733

ABSTRACT:
A semiconductor multiple quantum well mesa structure, for use as the optically active element in an optical logic or an optically controlled optical switching device, has its side surfaces implanted with surface recombination centers, whereby the optical switching speed is increased.

REFERENCES:
patent: 4696828 (1987-09-01), Schachzer et al.
patent: 4804639 (1989-02-01), Yablonovitch
patent: 4843037 (1989-06-01), Yablonovitch et al.
patent: 4861976 (1989-08-01), Jewell et al.
Appl. Phys. Lett. 53 (4), Jul. 25, 1988, "Optical Measurement of Surface Recombination in InGaAs Quantum Well Mesa Structures", by K. Tai et al, pp. 302-303.
Appl. Phys. Lett. 50 (13), Mar. 30, 1987, "1.55 um Optical Logic Etalon with Picojoule Switching Energy Made of InGaAs/InP Multiple Quantum Wells", by K. Tai et al, pp. 795-797.

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