Semiconductor mesa contact with low parasitic capacitance and re

Details Semiconductor mesa contact with low parasitic capacitance and re Semiconductor mesa contact with low parasitic capacitance and re

1981-04-07

1988-03-29

Clawson, Jr., Joseph E.

357 52, 357 56, 357 74, H01L 2948

Patent

active

047347490

ABSTRACT:
Method of manufacturing silicon mesa diodes from a wafer of silicon. The surface of the wafer is coated with a first layer of silicon nitride and a second layer of silicon oxide. By masking and etching procedures, silicon nitride is left only on the portions of the surface defining the mesas to be formed. The wafer is etched to form the mesas and then treated to form a passivating silicon oxide coating at all the exposed surfaces of the wafer. The silicon nitride is removed from the upper surfaces of the mesas and metal contacts are applied to these upper surfaces. The wafer is subsequently divided into discrete dice, each containing a mesa, and the dice are mounted in suitable enclosures.

REFERENCES:
patent: 2894183 (1959-07-01), Fermanian
patent: 2930722 (1960-03-01), Ligenza
patent: 3001113 (1961-09-01), Mueller
patent: 3030557 (1962-04-01), Dermit
patent: 3160534 (1964-12-01), Oroshnik
patent: 3197608 (1965-07-01), Ingraham
patent: 3241011 (1966-03-01), DeMille et al.
patent: 3242061 (1966-03-01), Armstrong
patent: 3266137 (1966-08-01), DeMille et al.
patent: 3280388 (1966-10-01), Kadelburg
patent: 3339274 (1967-09-01), Saia et al.
patent: 3354258 (1967-11-01), Saia et al.
patent: 3476984 (1969-11-01), Tibol
patent: 3537889 (1970-11-01), Mets et al.
P. Totta, "Depositing Pd Ohmic Contact Layers on Semiconductor Devices", IBM Tech. Discl. Bull., vol. 11, #3, Aug. 1968, p. 216.

Affiliated with

Also associated with

Rating

Semiconductor mesa contact with low parasitic capacitance and re does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor mesa contact with low parasitic capacitance and re, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor mesa contact with low parasitic capacitance and re will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1092001