Semiconductor memory with voltage stabilization

Static information storage and retrieval – Systems using particular element – Semiconductive

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Details

377 57, 377 63, G11C 1928, H03K 2346

Patent

active

049875582

ABSTRACT:
In dynamic memories, generally a fluctuation of 10% of the nominal value of the supply voltage is allowed. Since, when reading, the input gate is applied to the supply, this fluctuation in the supply results in 20% of fluctuation in the charge packet formed below the input gate. In order to eliminate this fluctuation and hence to increase the permitted interference margin for other interference sources, a voltage stabilization circuit is arranged between the supply voltage and the input gate so that the fluctuation in the supply also occurs at the source zone, as a result of which the size of the charge packet becomes independent of the supply. For the voltage stabilization circuit, use may advantageously be made of a band gap reference.

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