Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-12-26
2006-12-26
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S131000, C365S230030
Reexamination Certificate
active
07154799
ABSTRACT:
Flags are formed to respectively correspond to memory cell groups each including volatile memory cells. Each flag indicates as a set state that the memory cells store data in a second memory mode. In a changing operation of changing from a first memory mode in which data is independently retained by each memory cell to a second memory mode in which same data are retained in the memory cells of each memory cell group, each flag is reset in response to the first access to the corresponding memory cell group. Therefore, only the first access is made in the second memory mode in each memory cell group. The memory cells are accessed in a mode according to the flag in the changing operation, thereby allowing a system managing the semiconductor memory to freely access the memory cells even during the changing operation. Consequently, a practical changing time can be eliminated.
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Arent Fox PLLC.
Phung Anh
Sofocleous Alexander
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